Chemical vapor deposition apparatus and cleaning method thereof

摘要

A chemical vapor deposition apparatus for depositing a thin film of highly dielectric materials for giga-capacity memory devices can reliably clean reaction products formed within the deposition chamber without sacrificing the production efficiency. The apparatus comprises a hermetic deposition chamber (10) containing a substrate holding section for placing a substrate, and a gas supply head (12) disposed opposite to the substrate holding section (14) for directing a gaseous feed material onto the substrate. There are provided a trapping member supporting device for supporting a trapping member (26) so as to be opposite to a target cleaning area inside the deposition chamber, and a plasma generation device for generating a plasma between the target cleaning area and the trapping member supported by the trapping member supporting device.