Photolithographic processing method and apparatus

摘要

The present invention provides a processing method which comprises the steps of subjecting the surface of a semiconductor substrate (701) or the surface of a substrate formed of a semiconductor, a metal or an insulator, to selective irradiation with a synchrotron orbit radiation (708a) so that electron donative properties of the surface are changed to give the desired pattern; and selectively depositing a metal film on the surface endowed with said electron donative properties. Furthermore, the present invention provides an apparatus for carrying out all the steps of fabricating a semiconductor device in a series of vacuum vessels capable of being evacuated, which comprises a load lock chamber (702); a film forming chamber; an etching chamber; a latent image forming chamber (707); a metal-film depositing chamber (713); a cleaning chamber; and a vacuum gate valve.