发明名称 |
MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches |
摘要 |
This invention discloses a MOSFET device which includes a plurality of vertical cells each includes a source, a drain, and a channel for conducting source-to-drain current therethrough. Each of the vertical cells is surrounded by a polysilicon layer acting as a gate for controlling the source-to-drain current through the channel. The MOSFET device further include a plurality of doping trenches filled with trench-filling materials, The MOSFET device further includes a plurality of deep-doped regions disposed underneath the doping trenches wherein the deep-doped region extends downwardly to a depth which is substantially a sum of an implant depth of the deep-doped region and a vertical diffusion depth below a bottom of the doping trenches.
|
申请公布号 |
US5895951(A) |
申请公布日期 |
1999.04.20 |
申请号 |
US19960628493 |
申请日期 |
1996.04.05 |
申请人 |
MEGAMOS CORPORATION |
发明人 |
SO, KOON CHONG;TSUI, YAN MAN;HSHIEH, FWU-IUAN;LIN, TRUE-LON;NIM, DANNY CHI |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/10;H01L29/40;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|