| 摘要 |
PROBLEM TO BE SOLVED: To obtain apparatus parts capable of readily preparing and having good grounding resistance by including a first sintering silicon carbide part having first specific resistivity and a second sintering silicon carbide part bonded to the first part and having second specific resistivity different from the first resistivity. SOLUTION: It is preferable to form a silicon carbide film having a third prescribed resistivity on a second part. A first resistivity and a third resistivity are different by at least 10 times and the second resistivity and the third resistivity are different in the range exceeding 4 times. The silicon carbide film is preferably formed on a first side of a second sintering silicon carbide part and a first sintering silicon carbide part is bonded to second side of the second part positioned on the opposite side of the first side. This bonded silicon carbide product is formed by bonding cylindrical silicon carbide parts 90, 92, 94 and 96, a base plate 98 and a base ring 100. The silicon carbide product is promising as wall of plasma reactor. |
