发明名称 Integrated circuit memory devices and operating methods including temporary data path width override
摘要 An integrated circuit memory device includes an array of memory cells having a selectable first or second data path width. The integrated circuit memory device also includes a circuit which permanently selects one of the first and second data path widths for permanent operation of the integrated circuit memory device, and which temporarily overrides the permanent selection, to thereby temporarily operate the integrated circuit memory device using the other data path width. Accordingly, for example, when the first path width is a 16 bit path width and the second path width is a 4 bit path width, the path width is permanently selected during manufacturing of the integrated circuit memory device, to thereby manufacture 16 bit path width or 4 bit path width devices. However, during testing, the 16 bit path width devices may be temporarily overridden and tested as 4 bit path width devices. The number of test pins which are required can therefore be reduced and testing efficiency can be improved.
申请公布号 US5896395(A) 申请公布日期 1999.04.20
申请号 US19960772893 申请日期 1996.12.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SI-YEOL
分类号 G11C29/00;G11C7/10;G11C29/34;G11C29/48;G11C29/56;(IPC1-7):G11C29/00 主分类号 G11C29/00
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