发明名称 Process for growing single crystal
摘要 A process for growing a single crystal comprises providing a single crystal substrate acting as a seed crystal above a source material in a container, heating the source material in an inert gas atmosphere in the container to form a sublimed source material, and discharging the sublimed source material from the container through a port above the single crystal substrate, to cause the sublimed source material to flow along and in parallel with a surface of the single crystal substrate, and grow a single crystal on the surface of the single crystal substrate.
申请公布号 US5895526(A) 申请公布日期 1999.04.20
申请号 US19960689272 申请日期 1996.08.06
申请人 NIPPONDENSO CO., LTD. 发明人 KITOH, YASUO;SUZUKI, MASAHIKO;SUGIYAMA, NAOHIRO
分类号 C30B23/00;C30B23/02;C30B29/36;(IPC1-7):C30B29/36 主分类号 C30B23/00
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