发明名称 |
Process for growing single crystal |
摘要 |
A process for growing a single crystal comprises providing a single crystal substrate acting as a seed crystal above a source material in a container, heating the source material in an inert gas atmosphere in the container to form a sublimed source material, and discharging the sublimed source material from the container through a port above the single crystal substrate, to cause the sublimed source material to flow along and in parallel with a surface of the single crystal substrate, and grow a single crystal on the surface of the single crystal substrate.
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申请公布号 |
US5895526(A) |
申请公布日期 |
1999.04.20 |
申请号 |
US19960689272 |
申请日期 |
1996.08.06 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
KITOH, YASUO;SUZUKI, MASAHIKO;SUGIYAMA, NAOHIRO |
分类号 |
C30B23/00;C30B23/02;C30B29/36;(IPC1-7):C30B29/36 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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