发明名称 |
Integrated edge structure for high voltage semiconductor devices and related manufacturing process |
摘要 |
An integrated edge structure for a high voltage semiconductor device comprising a PN junction represented by a diffused region of a first conductivity type extending from a semiconductor device top surface is described. The edge structure comprises a first, lightly doped ring of the first conductivity type obtained in a first, lightly doped epitaxial layer of a second conductivity type and surrounding said diffused region, and a second, lightly doped ring of the first conductivity type, comprising at least one portion superimposed on and merged with said first ring, obtained in a second, lightly doped epitaxial layer of the second conductivity type grown over the first epitaxial layer.
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申请公布号 |
US5895249(A) |
申请公布日期 |
1999.04.20 |
申请号 |
US19960604110 |
申请日期 |
1996.02.20 |
申请人 |
CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO |
发明人 |
ZAMBRANO, RAFFAELE;LEONARDI, SALVATORE;CACCIOLA, GIOVANNA |
分类号 |
H01L29/73;H01L21/331;H01L21/76;H01L29/06;H01L29/10;H01L29/732;H01L29/78;(IPC1-7):H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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