发明名称 |
Method for etching nitride |
摘要 |
A method for etching nitride is provided, by which the etching rate and the roughness of the etching surface can be powerfully controlled, and by which the etching depth can be in-situ monitored. The etching method comprises the steps of: (i) coating a first electrode on a nitride chip; (ii) mounting the nitride chip on a holding device; (iii)dipping the holding device, the nitride chip and the first electrode in electrolysis liquid; (iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and (v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.
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申请公布号 |
US5895223(A) |
申请公布日期 |
1999.04.20 |
申请号 |
US19970988301 |
申请日期 |
1997.12.10 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
PENG, LUNG-HAN;CHUANG, CHIH-WEI;HO, JIN-KUO;CHEN, CHIN-YUAN |
分类号 |
H01L21/311;H01L21/318;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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