发明名称 |
Initializing and reprogramming circuitry for state independent memory array burst operations control |
摘要 |
A synchronous dynamic random access memory (SDRAM) device having a master control circuit for accepting a first command and a second command and having an initialization and reprogramming circuit. The master control circuit generates and initialization signal in response to the first command and generates a reprogramming signal in response to the second command. The initialization and reprogramming circuit responds to the initialization signal to control initial programming of a burst control operation feature and responds to the reprogramming signal to control a reprogramming of the burst control operation feature.
|
申请公布号 |
US5896551(A) |
申请公布日期 |
1999.04.20 |
申请号 |
US19940228051 |
申请日期 |
1994.04.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
WILLIAMS, BRETT;SCHAEFER, SCOTT |
分类号 |
G11C5/06;G11C7/10;G11C11/4072;G11C11/4096;(IPC1-7):G06F13/28 |
主分类号 |
G11C5/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|