发明名称 |
Semiconductor device and fabrication process thereof |
摘要 |
A silicon layer serving as a contact plug directly connected to a diffusion layer of a MOS transistor is provided. On a surface of an N- type diffusion layer in self-alignment with a silicon nitride layer spacer and a field oxide layer, an N+ type monocrystalline silicon layer formed by anisotropic selective epitaxial growth method is directly connected. The surface of the N+ type monocrystalline silicon layer is directly connected to an N+ type monocrystalline silicon layer formed by isotropic selective epitaxial growth. |
申请公布号 |
US5895948(A) |
申请公布日期 |
1999.04.20 |
申请号 |
US19970936919 |
申请日期 |
1997.09.25 |
申请人 |
NEC CORPORATION |
发明人 |
MORI, HIDEMITSU;TATSUMI, TORU;HADA, HIROMITSU;KASAI, NAOKI |
分类号 |
H01L23/522;H01L21/20;H01L21/205;H01L21/28;H01L21/768;H01L21/8234;H01L21/8242;H01L27/088;H01L27/108;H01L29/78;(IPC1-7):H01L27/02;H01L27/08 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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