发明名称 HIGH-PURITY BAXSR1-XTIO3-Y TARGET MATERIAL FOR SPUTTERING
摘要 PROBLEM TO BE SOLVED: To manifest better dielectric characteristics, further reduce a leak current which has hitherto been a problem and prevent a soft error from occurring in a target material for sputtering comprising a perovskite type compound oxide represented by Bax Sr1-x TiO3-y . SOLUTION: This target material for sputtering has <=1 ppm content of respective elements of the group of Na, K, Mg, Fe, Ni, Co, Cr, Cu and Al and $1 ppb content of the respective elements of U and Th in the target material for the sputtering comprising a perovskite type compound oxide represented by the formula Bax Sr1-x TiO3-y [0<=(x)<1 and 0<=(y)<0.5].
申请公布号 JPH11106257(A) 申请公布日期 1999.04.20
申请号 JP19970283201 申请日期 1997.10.01
申请人 JAPAN ENERGY CORP 发明人 SUZUKI SATORU;SHINDO YUICHIRO;SUZUKI TSUNEO
分类号 C04B35/46;C23C14/34;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108 主分类号 C04B35/46
代理机构 代理人
主权项
地址