| 摘要 |
PROBLEM TO BE SOLVED: To provide the subject production unit capable of obtaining high-purity silicon carbide powder, and to provide a method for producing silicon carbide powder using the above production unit. SOLUTION: This production unit for silicon carbide powder is made up of a reactor 10 for affording the aimed silicon carbide powder by baking a silicon carbide stock mixture in an inert gas atmosphere, a gas inflow equipment 18 for allowing an inert gas to flow thereinto from one direction of the reactor, a circulating blower 16 for exhausting the inert gas and impurities produced during the baking process from a direction differing from the inflow direction for the inert gas to recover the impurities followed by returning the inert gas to the gas inflow equipment 18, a recovery equipment 12 for introducing the gas exhausted from the reactor 10 thereinto and recovering the impurities in the gas by quenching the gas so as to effect solidification of the impurities, and a dust collector 14 for capturing fine powder in the gas. |
