TREATMENT OF SEMICONDUCTOR WAFER AND APPARATUS

摘要

PROBLEM TO BE SOLVED: To produce a semiconductor wafer having little slip, defect, etc., of a crystal lattice. SOLUTION: This method for producing a semiconductor wafer comprises supporting a semiconductor wafer substrate W cut in a crystal face (100) from a semiconductor single crystal by a substrate-supporting table installed at a prescribed position in a heat treating space in a vertical or tilted state, and treating the supported substrate under a heated condition. The method also comprises a positioning step for fixing the portion corresponding to the crystal orientation <110> of the semiconductor wafer substrate, on the wafer outer periphery as a lower end-supporting position, and an installing step for installing the semiconductor wafer substrate W so that the lower end supporting position may be put downward together with a lower end-supporting part 7 formed at the lower part of the substrate-supporting table.