Semiconductor non-volatile programmable memory device preventing non-selected memory cells from disturb during programmable operation

摘要

An electrically erasable and programmable read only memory device unavoidably creates weak electric field between control electrodes and drain nodes of non-selected floating gate type field effect transistors connected to either selected word or bit line in an erasing/programming operation; however, the direction of the electric field is changed during the erasing/programming operation so as to prevent the non-selected floating gate type field effect transistors from disturbing phenomenon.