| 摘要 |
The present invention discloses a plasma etching apparatus which can protect the surface of the wafer from a damage due to collisions among the etching ions and can also process a plurality of wafers only by one-time plasma generation. In the etching apparatus of the present invention, a plurality of wafers are loaded in the chamber by a plurality of wafer support members which are located vertically round the gas dispersion tube used as a cathode electrode, and magnetic field formation means are provided to form a magnetic field around each wafer.
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