发明名称 |
Method of preparing silicon carbide wafers for epitaxial growth |
摘要 |
Silicon carbide wafers are prepared for semiconductor epitaxial growth by first lapping a silicon carbide wafer derived from a boule, by placing the wafer in a recess of a metal backed template and moving the wafer over and against a rotating plate. Two different diamond slurry mixtures of progressively smaller diamond grit sizes are sequentially used, along with a lubricant, for a predetermined period of time. The lapping operation is followed by a polishing operation which sequentially utilizes two different diamond slurry mixtures of progressively smaller diamond grit sizes, along with three different apertured pads sequentially applied to a rotatable plate, with the pads being of progressively softer composition. In a preferred embodiment the wafers are cleaned and the templates are changed after each new diamond slurry mixture used.
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申请公布号 |
US5895583(A) |
申请公布日期 |
1999.04.20 |
申请号 |
US19960752112 |
申请日期 |
1996.11.20 |
申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
AUGUSTINE, GODFREY;BARRETT, DONOVAN L.;HALGAS, ELIZABETH ANN |
分类号 |
B24B37/04;C30B33/00;H01L21/304;(IPC1-7):C23F1/00 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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