HALBLEITERSICHERUNGSANORDNUNG

摘要

The fuse includes a substrate (11) comprising arsenic-doped silicon at a level of 2 x 10 power 19 atoms/cc. or phosphorus-doped silicon at a level of 2 x 10 power 20 atoms/cc. The bottom surface of the substrate is provided with a metal layer (19) forming a contact for the device. Overlying the dielectric and uncovered sections are the conductive contacts (14,15) which are sepd. by the fuse (16) comprising phosphorus-doped polycrystalline silicon. A wire bond (17) bonds the single contact wire (18) to one of the contacts. The contact (14) overlies the uncovered section (13) of the substrate which is a highly phosphorus-doped silicon which minimises resistivity across junction.