SEMICONDUCTOR MEMORY DEVICE HAVING A WORD LINE FOR IMPROVING YIELD RATE,申请号KR19950022941-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY DEVICE HAVING A WORD LINE FOR IMPROVING YIELD RATE
摘要
申请公布号	KR0183725(B1)	申请公布日期	1999.04.15
申请号	KR19950022941	申请日期	1995.07.28
申请人	SAMSUNG ELECTRONICS CO, LTD.	发明人	HAN, EUI-KYU;YOO, KWANG-SUK;LIM, KI-WON
分类号	H01L27/06;G11C11/401;G11C11/407;H01L21/3205;H01L21/8234;H01L21/8242;H01L23/52;H01L27/10;H01L27/108;H01L27/11;(IPC1-7):G11C11/40	主分类号	H01L27/06
代理机构		代理人
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