Level shifting circuit for memory circuit e.g. DRAM

摘要

The circuit includes an inverter (INV31), four PMOS transistors (PM31-34) and four NMOS transistors (NM31-34). If a first input signal is a selected block signal, and a second input signal is a select signal for a block connected to a sense amplifier, then the first input signal becomes a high level if a memory circuit is blocked, and become a low level when the memory circuit is released.