| 摘要 |
710,245. Semiconductor devices: ROBILLARD, J. J. A. Sept. 30, 1952, [Jan. 8, 1952.] No. 24457/52. Class 37. A contact arrangement for transistors or crystal rectifiers comprises a conducting layer which is evaporated on the surface of the crystal through the spaces in a fine-meshed conducting grid placed on the crystal surface, the layer being insulated from the grid, so as to provide a number of point contacts connected in parallel. The grid may be of copper, and of the type used for electrotypes, with approximately 20 meshes per mm<SP>2</SP>. Fig. 3 shows a rectifier construction, in which a germanium crystal 1 on a base electrode 5, has on its surface, a grid 2 having a thin insulating layer 3. The layer 3 may be provided by evaporating silicon dioxide on to the grid. The conducting layer 4 may be provided by evaporating tungsten by means of electrically heated wires placed close to the grid. The parts of the layer 4 in each of the meshes of the grid provide substantially point contacts on the germanium. The layer of insulation between the grid 3 and the germanium may be omitted, so that the grid contacts the surface,whereby each mesh of the grid co-operates with the contact point of the layer 4 to enable transitor effect to be obtained. Fig. 4 shows a transistor comprising a germanium crystal t, and base electrode 5 in a plastic envelope 6. The grid 2, covered with insulation except for the under surface as described, is held against the crystal surface by plastic ring 7. A tungsten layer 4 is evaporated on to the grid and crystal, and on to contact piece 8. Aperture 12 may be sealed with plastic material. |
