| 发明名称 |
AN IMPROVED SILICON CARBIDE GATE TURN-OFF THYRISTOR ARRANGEMENT |
| 摘要 |
A silicon carbide gate turn-off thyristor (GTO) has a silicon carbide junction field effect transistor (JFET) connected between the gate of the GTO and one of its anode or cathode electrodes thereby minimizing cooling requirements while providing for rapid switching.
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| 申请公布号 |
WO9918615(A1) |
申请公布日期 |
1999.04.15 |
| 申请号 |
WO1998US20616 |
申请日期 |
1998.09.29 |
| 申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
AGARWAL, ANANT |
| 分类号 |
H01L27/08;H01L29/24;H01L29/744;(IPC1-7):H01L29/745;H01L21/04 |
主分类号 |
H01L27/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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