| 摘要 |
A semiconductor device having a metal interconnection includes an insulating film provided on a semiconductor substrate via a diffusion layer. An interlayer contact hole is formed in the insulating film. A metal silicide layer is provided at the bottom of the interlayer contact hole. A first conductive film comprises a single or a plurality of metal films provided on the insulating film and the interlayer contact hole. A second conductive film is provided in the interlayer contact hole. A third conductive film is provided on the first conductive film and the second conductive film. A fourth conductive film is provided on the third conductive film. This semiconductor device has improved durability with respect to electromigration or stress migration. Even when the interconnection has a multilevel structure, the contact resistance can be reduced by causing the interlayer contact hole portions to contact one another by the same kind of metal. |
