发明名称 |
SEMICONDUCTOR DEVICE HAVING DUMMY PATTERNS AND AN UPPER INSULATING LAYER HAVING CAVITIES |
摘要 |
A semiconductor device comprises a plurality of wiring formed on a lower insulating film to be spaced apart from each other, dummy patterns formed on the lower insulating layer between the plurality of wiring and spaced apart from each other, and an upper insulating layer formed to cover the plurality of wiring and the dummy patterns and having cavities formed in regions between the plurality of wiring and the dummy patterns. |
申请公布号 |
KR0186238(B1) |
申请公布日期 |
1999.04.15 |
申请号 |
KR19950038673 |
申请日期 |
1995.10.31 |
申请人 |
FUJITSU LTD. |
发明人 |
HOSODA, YUKIO;ICHIKAWA, MASAAKI |
分类号 |
H01L21/285;H01L21/28;H01L21/768;H01L23/12;H01L23/522;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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