Verfahren zum Ätzen eines Verbundhalbleiters

摘要

Semiconductor device fabrication comprises providing a workpiece (12) including a III-V cpd. semiconductor surface in a reactor (10) and etching in a pulsed mode including spaced intervals in which an etchant gas (16) is introduced. In the intervals between the etchant a gas including a gp. III constituent which is capable of migrating along the surface is introduced into the reactor (20), and a semiconductor layer is grown on the surface in-situ after etching.