Gas pressure determining method for cavity of semiconductor micro-m-mechanical sensor chamber with deformable wall of semiconductor component

摘要

The method involves forming at least two components with hollow chambers (21) and identically deformable membranes (3) each defining a respective chamber. The chambers are closed with identical gas pressure. One hollow chamber is provided with an opening (9) outside the deformable membrane. An external gas pressure is determined with which a corresponding resonance frequency of the membrane of a closed chamber matches the resonance frequency of the membrane provided with the opening. Preferably, first the resonance frequency of the membrane of a closed chamber is measured. This chamber is then opened by etching an opening outside the membrane. Then, the resonance frequency of the membrane of the open chamber is measured. of same wafer.