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发明名称
INITIALLY DISCHARGING CONTROL CIRCUIT TO COMPENSATE MEMORY EFFECT OF NICD BATTERY
摘要
申请公布号
KR0163886(B1)
申请公布日期
1999.04.15
申请号
KR19950026874
申请日期
1995.08.28
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LIM, SANG-TAE;JUNG, SANG-HUN
分类号
H02J7/02;(IPC1-7):H02J7/02
主分类号
H02J7/02
代理机构
代理人
主权项
地址
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