发明名称 |
Improved gapfill of semiconductor structures using doped silicate glass |
摘要 |
<p>Improved gap fill of narrow spaces is achieved by using a doped silicate glass having a dopant concentration in a bottom portion thereof which is greater than an amount which causes surface crystal growth and in an upper portion thereof having a lower dopant concentration such that the overall dopant concentration of the doped silicate glass is below that which causes surface crystal growth. <IMAGE></p> |
申请公布号 |
EP0908946(A2) |
申请公布日期 |
1999.04.14 |
申请号 |
EP19980118244 |
申请日期 |
1998.09.25 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
KIRCHHOFF, MARKUS;ILG, MATTHIAS |
分类号 |
H01L21/316;H01L21/762;H01L21/768;H01L23/522;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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