| 摘要 |
<p>In a virtual ground type semiconductor storage device, all of memory cells connected to one word line in blocks of eight memory cells are read in four sense operations. In each read operation, three consecutive main bit lines (BL) are discharged by a discharge signal (dis) and two memory cells (MC) which are each connected to both a discharged main bit line and a charged main bit line are used as read memory cells, whereby the influence of a leak current from both the adjacent memory cells on the read memory cells is suppressed to the minimum. Among adjust cells (AC) activated by an adjust signal (awl), ones (AC) connected to only the charged main bit lines are designed as programmed cells (P) to reduce a variation in leak current to a sense main bit line due to data retained in the memory cells (MC) connected to only the charged main bit lines. <IMAGE></p> |
