摘要 |
<p>There are provided a photoelectric conversion apparatus which comprises a light-receiving element including a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type formed on the surface of the semiconductor substrate, a transparent insulating layer formed on the semiconductor substrate, and a light-shielding layer formed on the insulating layer and having an opening with an area larger than the first semiconductor region, and in which the light-receiving element includes a plurality of first semiconductor regions in a single opening, and the first semiconductor regions in the single opening are electrically connected to each other, and an image sensor using the apparatus. <IMAGE></p> |