发明名称 |
Non-volatile memory cell structure and process for forming same |
摘要 |
<p>A non-volatile split-gate memory cell 8 which can be programmed with only a five volt power supply and is fabricated using standard transistor processing methods, comprises a semiconductor substrate 10 with a source 12 and a drain 14 region separated by a channel region 16. A conductive floating gate 18 is formed over a portion 16a of the channel region 16 and separated by a FAMOS oxide 20. A conductive control gate 22 is formed over but electrically insulated from the floating gate 18 and over a second portion 16b of the channel region 16. The control gate 22 is separated from the second portion of the channel 16b by a pass oxide 26 which is thicker than the FAMOS oxide 20. Other embodiments and processes are also disclosed. <IMAGE></p> |
申请公布号 |
EP0495492(B1) |
申请公布日期 |
1999.04.14 |
申请号 |
EP19920100657 |
申请日期 |
1992.01.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KAYA, CETIN;TIGELAAR, HOWARD |
分类号 |
G11C11/412;G11C16/04;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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