发明名称 |
Rectifying transfer gate circuit |
摘要 |
<p>A rectifying transfer gate circuit includes first and second field effect transistors and one diode. The source of the first field effect transistor is coupled to a first input node and the gate thereof is coupled to a second input node. Meanwhile, the source of the second field effect transistor is coupled to the second input node and the gate thereof is coupled to the first input node. The diode is coupled between the common drain of the first and second field effect transistors and an output node, so as to increase the speed of the operation in the application circuit utilizing the above rectifying transfer gate circuit. <IMAGE></p> |
申请公布号 |
EP0909033(A2) |
申请公布日期 |
1999.04.14 |
申请号 |
EP19980203709 |
申请日期 |
1993.12.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MAKASHIMA, TAKASHI |
分类号 |
H01L21/8234;G06F7/50;G06F7/501;H01L27/07;H01L27/088;H03K17/687;H03K19/0944;H03K19/21;(IPC1-7):H03K19/094 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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