发明名称 Formation of a bottle shaped trench
摘要 <p>A method for forming a bottle shaped trench 20 in a semiconductor substrate 10 includes etching a trench having a tapered top portion 25 in the semiconductor device and continuing to etch with different etch parameters to impart a reentrant profile 22 to the trench. &lt;IMAGE&gt;</p>
申请公布号 EP0908936(A2) 申请公布日期 1999.04.14
申请号 EP19980307809 申请日期 1998.09.25
申请人 SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES 发明人 MULLER, KARL P.;SCHMITZ, STEFAN;RANADE, RAJIV M.
分类号 H01L21/302;H01L21/3065;H01L21/8242;H01L27/108;(IPC1-7):H01L21/306;H01L21/308 主分类号 H01L21/302
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