发明名称 |
FLASH MEMORY BASED MAIN MEMORY |
摘要 |
An asynchronous nonvolatile memory includes a plurality of individual memory components. A burst read operation references consecutive addresses beginning with a first address, wherein the consecutive addresses are not located in a same memory component. A method of performing a burst read operation in the asynchronous nonvolatile memory includes the step of providing the first address as a current address to the plurality of individual components. A current page identified by m higher order bits of the current address is selected. Each of the individual memory components senses a location identified by the m higher order bits. An output of a selected individual memory component is enabled in accordance with n lower bits of the current address. A consecutive subsequent address is provided, wherein the current address becomes a preceding address and the consecutive subsequent address becomes the current address. The output of another selected individual memory component identified by the n lower order bits of the current address is enabled without generating wait states, if the current and preceding addresses identify a same page. The process of providing consecutive subsequent addresses and enabling the output of a memory component identified by the n lower order bits is repeated as long as the current and preceding addresses identify the same page. |
申请公布号 |
EP0765498(A4) |
申请公布日期 |
1999.04.14 |
申请号 |
EP19950922954 |
申请日期 |
1995.06.01 |
申请人 |
INTEL CORPORATION |
发明人 |
MILLS, DUANE, R.;DIPERT, BRIAN, LYN;SAMBANDAN, SACHIDANANDAN;MCCORMICK, BRUCE;PASHLEY, RICHARD, D. |
分类号 |
G06F12/06;G06F12/08;G11C7/10;(IPC1-7):G06F12/08 |
主分类号 |
G06F12/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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