| 摘要 |
<p>The present invention provides a processing method comprising subjecting the surface of a substrate (803) to selective irradiation with light after the desired circuit pattern in an atmosphere of a modifying gas capable of modifying the surface, while maintaining the temperature (809,812) of said surface of the substrate to a given temperature range within which a pressure of said modifying gas reaches a saturated vapor pressure, to form on said surface of the substrate a surface-modified layer having a pattern structure; and etching the surface-unmodified layer using said surface-modified layer as a protective film. Furthermore, the present invention provides a processing apparatus comprising a light source, a latent image forming chamber (808), and an etching chamber (818); wherein said apparatus further comprises an evacuating means; said latent image forming chamber comprises a modifying gas feeding means (805b), a holder (802b), and an optical system (813,814,815,816); and said etching chamber comprises a holder (802c), and an etching gas feeding means (805d). <IMAGE></p> |
