| 摘要 |
PROBLEM TO BE SOLVED: To enable to obtain parameters which satisfy matching between distributions of a different amount of implantation energy and to perform a simulation with a high accuracy with the aid of dual piason distribution. SOLUTION: Measured data at each ion implantation with different implanting energy are obtained (S11). Initial parameters are calculated (S12) according to the measured data. Fitting of parameters showing a first piason distribution is performed according to the initial parameters (S13). The parameters are adjusted according to relation line between the fitted parameters and the implanting energy (S14). Data concerning the first piason distribution is subtracted from the measured data (S15). A second piason distribution is determined (S16). Parameters showing the second piason distribution is subjected to fitting according to initial parameters showing the second piason distribution (S17). The parameters showing the second piason distribution are adjusted according to relation line with the implanting energy (S18). Each adjusted parameter is subjected to fitting (S19). |
