| 摘要 |
PROBLEM TO BE SOLVED: To form a fine and thin thermal oxide film having no pin hole and having a uniform thickness on the surface of an active layer, by forming an island-like active layer on a glass substrate, and annealing the active layer in an oxidizing atmosphere at a temperature which does not cause warping or contraction of the substrate. SOLUTION: An amorphous silicon film 205 is formed on an underlying layer 202 formed on a substrate 201, and this amorphous silicon film 205 is patterned to form an active layer 203. After the active layer is crystallized by laser irradiation, it is annealed in an oxygen atmosphere at about 600 deg.C for approximately one hour. Thus, a thermal oxide film 204 is formed on the surface of the active layer 203. Moreover, using tetra excimer silane as a material, a gate insulating film 205 of silicon oxide is formed by a plasma CVD method. By thus annealing the active layer at the temperature which does not cause warping or contraction of the substrate 201, the fine and thin thermal oxide film 204 having no pin hole and having a uniform thickness is formed. |
