| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor memory without the probability that a DRAM circuit is affected by a noise occurring from a booster circuit. SOLUTION: Plural DRAM chips 9 excepting a source voltage conversion circuit being the circuit driven by a large current and a source voltage conversion chip 10 collecting the source voltage conversion circuit are mounted in separate packages to be loaded on a memory board 11, and operation voltages are supplied from the source voltage conversion chip 10 to the DRAM chips 9 requiring plural kinds of operation voltages. Thus, since the number of DRAM chips 9 driven by a source voltage conversion chip 10 aren't limited, and memory capacity is increased only by adding the DRAM chips 9 excepting the source voltage conversion circuit, the inexpensive semiconductor memory is provided. |
