| 摘要 |
PROBLEM TO BE SOLVED: To enable higher integration with an easy manufacturing method by providing a transistor connected to a capacitor having first and second electrodes formed inside a groove on a specified surface of silicon through epitaxial growth. SOLUTION: Using a first Si substrate 1, a trench surrounded by (100) orientation for embedding a capacitor is formed by an etching method. Next, (Ti, Al) N is epitaxially grown as a barrier metal layer 2. Subsequently, as a first electrode 3, SrRuO3 (SRO) is epitaxially grown conformally. As a second electrode 5, SRO is eqitaxially grown and embedded in the trench. Next, a groove is formed in a silicon layer 7 of a SOI substrate, and an insulating film is embedded in the groove, thus forming a trench-isolated type element isolation film (STI) 9. Using etching conditions based on this STI 9, a source/drain impurity layer 13, word lines 15a ad 15b and the like are formed, thus producing a transistor. |
