SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a crystalline silicon film having high crystallinity. SOLUTION: A crystallized silicon film having high crystallinity is formed by crystallizing an amorphous silicon film by using an element, such as the nickel element, etc., as a catalytic element for accelerating the crystallization of the film. Firstly, crystal nucleus are formed by putting the catalytic element on the surface of the amorphous silicon film and heating the film to a temperature of 450-650 deg.C. Then the crystalline silicon film is formed by growing crystal grains by further heating the film to a higher temperature. In the crystalline silicon film thus formed, crystals are roughly grown along their (111)-axes.