| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a contact hole and a capacitor in a semiconductor integrated circuit such as an active matrix circuit or the like. SOLUTION: An interlayer insulator is caused to have a multilayered structure having different etching characteristics made up of a silicon oxide film 108 and a silicon nitride film 109. By using the silicon oxide film 108 of the lower layer as an etching stopper and by using a first mask, only the silicon nitride film 109 of the upper layer is etched. Next, by using a second mask, only the silicon oxide film exposed in apertures 110 and 111 is etched to form contact holes 113 and 114. Moreover, in an aperture 112 where the silicon oxide film 108 remains, a capacitor 119 using a lower wiring 107 and a pixel electrode 115 as electrodes and using the silicon oxide film 108 as a dielectric substance is formed. |
