发明名称 SURFACE WAVE DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a surface wave device having satisfactory characteristics using a leaking surface acoustic wave, by using a piezoelectric substrate constituted of dielectric thin films layered on a specific piezoelectric single crystal substrate. SOLUTION: An edge face reflection type surface wave resonator 1 is constituted by using a piezoelectric substrate 2 in which an electromechanical connection coefficient is large. In the piezoelectric substrate 2, a ZnO thin film 2b being a dielectric thin film constituted of materials whose surface wave propagating speed is slower than that of a substrate 2a is layered on a 41 deg.±3 rotation Y board Z propagation LiNbO3 substrate 2a. A pair of comb-shaped electrodes 3a and 3b are formed on the lower surface of the piezoelectric thin film 2b, that is, the upper surface of the substrate 2a. The comb-shaped electrodes 3a and 3b are not weighed, and formed so that a normal type interdigital transducer (IDT) can be constituted.
申请公布号 JPH1197973(A) 申请公布日期 1999.04.09
申请号 JP19970258516 申请日期 1997.09.24
申请人 MURATA MFG CO LTD 发明人 KADOTA MICHIO;YONEDA TOSHIMARO;NAKAO TAKESHI;IKEURA MAMORU
分类号 H03H9/25;(IPC1-7):H03H9/25 主分类号 H03H9/25
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