| 摘要 |
PROBLEM TO BE SOLVED: To reduce the parasitic capacity between the wires of a semiconductor integrated circuit, and to suppress a signal propagation delay, by using a low- dielectric composition including a basket-shaped molecular structure part, and by forming an insulating film with a low dielectric constant. SOLUTION: An insulating film 2 consisting of SiO2 is formed on the main surface of a silicon substrate 1, and a plurality of Al wires 3 being arranged in parallel one another are formed on the insulating film 2. Then, an insulating film 4 having a basket-shaped molecular structure part and a low dielectric constant is formed while covering the Al wires 3. Also, the thin space of an electron cloud is demarcated at the center of the basket-shaped molecular structure part, thus preventing a water molecule from entering, preventing the increase of the dielectric constant being caused by the entrance of the water molecule, and easily obtaining the low dielectric constant as compared with a dense material. Therefore, when the insulating film with a low dielectric constant is used in the interlayer insulating film of multilayed interconnection, the parasitic capacity between semiconductor integration circuit wires is reduced, and a signal propagation delay can be suppressed. |
