发明名称 PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a high throughput and excellent photosensitive stability and dimensional stability by including a process to bake a photosensitive layer, a process to expose the photosensitive layer to electron beams or ion beams according to a prescribed pattern, a process to develop the photosensitive layer after exposure, etc. SOLUTION: A photosensitive material described below is prepared. The photosensitive material has a photosensitive layer containing a polymer compd. the main chain of which is cut by irradiation of electron beams or ion beams, a compd. having substituents which decompose by acid catalytic reaction and produces polar groups, and a compd. which produces an acid by irradiation of chemical radiation of 150 to 450 nm wavelength, in one layer. The photosensitive layer is exposed to chemical radiation of 150 to 450 nm wavelength according to a prescribed pattern and then baked. Further, the photosensitive layer is irradiated with electron beams or ion beams according to the prescribed pattern. The photosensitive layer after exposed is developed to produce a fine pattern with a high throughput.
申请公布号 JPH1195436(A) 申请公布日期 1999.04.09
申请号 JP19970253608 申请日期 1997.09.18
申请人 TOSHIBA CORP 发明人 KIHARA NAOKO;SAITO SATOSHI;NAKASE MAKOTO
分类号 G03F7/039;G03F7/38;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/039
代理机构 代理人
主权项
地址