| 摘要 |
PROBLEM TO BE SOLVED: To improve contact characteristics and reliability of a semiconductor device provided with a capacity element. SOLUTION: After a conductor film 2 for a capacity lower electrode 3 containing at least phosphorus has been formed, a thermally oxidized silicon film 4 is formed on this conductor film 2, and phosphorus is diffused into a part 5 of this thermally oxidized silicon film 4. Thereafter, a groove 7 is formed on a face of the conductor film 2 usng a difference in etching rates of the oxidated silicon film 4 caused by segregation of the diffused phosphorus. Thereafter, a thermally oxidized silicon film 6 remaining on the conductor film 2 is removed, and a dielectric film 8 is formed on the surface of this groove 7. |
