| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory, wherein insulation property between a control gate and a board is restrained from lowering and characteristics of a memory cell is hardly damaged, even if a pattern of a cell in the outermost circumference of a memory cell array part and a pattern of a cell in an inner side thereof are different from each other. SOLUTION: Non-volatile semiconductor memory has memory cells DPC, MC comprising a memory cell array part 201 set in a silicon board 1, floating gates 6s, 6c arranged in the array part 201 into a matrix form and couples via a first capacity C1 of which dielectric is first gate insulation films 5d, 5c in the board 1 and a control gate 8 (WL1) coupled through a second capacity C2 of which dielectric is set as a second gate insulation film 7 in the floating gates 6d, 6c, and a second capacity C2 of the memory cell DPC arranged in an outermost circumference of the array part 201, which differs from a second capacity C2 of the memory cell MC arranged in the inner side of the memory cell DPC. The first gate insulation film 5d of the memory cell DPC arranged in an outermost circumference is made thicker than the first gate insulation film 5c of the memory cell MC arranged inside. |
