| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a structure of an insulating substrate in a high heat- generation semiconductor device, which can efficiently diffuse generated heat. SOLUTION: On a surface of a ceramic substrate (aluminum nitride substrate 103), an inner conductive layer (molybdenum layer 403) which is smaller in heat conductivity than the ceramic substrate is formed, on which is formed an outer conductive layer (copper layer 404) smaller in heat conductivity than the inner conductive layer. As a result, there can be obtained a structure of the insulating substrate and a semiconductor module, which can efficiently diffuse the generated heat.</p> |
