| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a gate drive circuit simplified by reducing the gate driving current Ig of an IGBT and improved IGBT reliability by reducing its collector saturated collector current. SOLUTION: This device, having a Darlington-coupled main IGBT 1 and auxiliary IGBT 2, wherein a gate driving voltage is fed to the gate of the IGBT 2 for switching on or off the main IGBT, is formed such that the threshold voltage VTH1 of the main IGBT 1 is greater than that VTH2 of the aux. IGBT 2. |
