发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To improve efficiency of test operation of a flash memory or the like provided with an internal voltage generating circuit and having a trimming function of each internal voltage. SOLUTION: A trimming data memory TROM consisting of non-volatile memories such as a flash memory or an EPROM is provided in a flash memory and like provided with an internal voltage generating circuit VG and having trimming functions of each internal voltage, a pseudo trimming data supplied from an external test device is taken in, and it is held. Consequently, by using a conventional device, independent trimming data are written individually in a trimming data memory TROM such as each flash memory and can be held even after disconnection of a power source, a test operation for confirming a function of the flash memory, etc., and acquiring a final trimming data, therefore, is performed simultaneously with plural and independent trimming data.</p>
申请公布号 JPH1196800(A) 申请公布日期 1999.04.09
申请号 JP19970274982 申请日期 1997.09.24
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 SHIGEMATSU KOJI;OKADA TERUTAKA;MUKODA HIDEFUMI;KATO NOBUO;IWATA KAZUYA;UCHIDA HIROYUKI;FUJIOKA HISAKO
分类号 G01R31/28;G11C16/06;G11C29/00;G11C29/12;H01L21/822;H01L21/8247;H01L27/04;H01L27/115;(IPC1-7):G11C29/00 主分类号 G01R31/28
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