| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of electroplating a semiconductor wafer wiring capable of thinning a diffusion layer of a reaction species, electroplating a fine wiring groove and hole by pitting, improving throughput, and preventing a deterioration of the film property and characteristic of the film. SOLUTION: An embedded wiring made of Cu (copper) is formed by electroplating in a wiring groove G and/or in a wiring hole G formed on a face W of a semiconductor wafer and shaped in the width of 1.0μm or less and an aspect ratio(AR) of 0.1 to 50. A pulse current is used for the electroplating with its peak current density in 0.01 to 80.0 A/dm<2> and a pulse duty ratio in 0.009 to 0.999. The electrolytic solution comprises a solution of Cu<2+> with its concentration of 0.0001 to 0.8 mol/l and aqueous solution of CuSO4 .5H2 O and H2 SO4 having no addition agent.
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