New metal-air-semiconductor field effect transistor (MASFET)

摘要

A semiconductor device has an active region gate electrode (4) which is separated from the substrate by a vacuum region, source and drain impurity regions (6) being provided below the substrate surface at both sides of the gate electrode (4). Independent claims are also included for (i) a semiconductor device having a first conductivity type semiconductor substrate (1) with field and active regions, a gate electrode (4) with an overlying cap insulating film (5) and sidewall insulations (7) on the active region, a vacuum region between the substrate and the gate electrode (4), lightly doped second conductivity type impurity regions (6) below the substrate surface and below the sidewall insulations (7) and heavily doped second conductivity type impurity regions (8) below the substrate surface and alongside the sidewall insulations (7); and (ii) processes for producing the above devices.